Photoluminescence of periodically 'Delta-Doped' InP in high magnetic fields (1997)
Source: International Conference High Magnetic Fields in the Physics of Semiconductors II, 12. Würzburg, 1996. Unidade: IF
Assunto: SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
HENRIQUES, André Bohomoletz et al. Photoluminescence of periodically 'Delta-Doped' InP in high magnetic fields. International Conference High Magnetic Fields in the Physics of Semiconductors II, 12. Würzburg, 1996. Tradução . Singapore: World Scientific, 1997. . . Acesso em: 15 maio 2024.APA
Henriques, A. B., Gonçalves, L. C. D., Bindilatti, V., Oliveira Júnior, H. F. de, Souza, P. L., & Yavich, B. (1997). Photoluminescence of periodically 'Delta-Doped' InP in high magnetic fields. In International Conference High Magnetic Fields in the Physics of Semiconductors II, 12. Würzburg, 1996. Singapore: World Scientific.NLM
Henriques AB, Gonçalves LCD, Bindilatti V, Oliveira Júnior HF de, Souza PL, Yavich B. Photoluminescence of periodically 'Delta-Doped' InP in high magnetic fields. In: International Conference High Magnetic Fields in the Physics of Semiconductors II, 12. Würzburg, 1996. Singapore: World Scientific; 1997. [citado 2024 maio 15 ]Vancouver
Henriques AB, Gonçalves LCD, Bindilatti V, Oliveira Júnior HF de, Souza PL, Yavich B. Photoluminescence of periodically 'Delta-Doped' InP in high magnetic fields. In: International Conference High Magnetic Fields in the Physics of Semiconductors II, 12. Würzburg, 1996. Singapore: World Scientific; 1997. [citado 2024 maio 15 ]
